English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V30L35TFGIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
DS1350YL-100Rochester Electronics |
IC NVSRAM 4MBIT PARALLEL 34LPM |
|
CY7C1011CV33-10BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
S29CD016J0MFAM010Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80FBGA |
|
DS1245W-100IND+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
S70GL02GS11FHI020Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
IS43LR32200C-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
CY7C1011CV33-10BVCRochester Electronics |
STANDARD SRAM, 128KX16 |
|
IS61LF51218A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT45DB161E-MHD2B-TAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8UDFN |
|
MX25L25673GZ4I-08GMacronix |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
S29GL01GT12TFVV20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS61NVP51236B-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
