类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 117 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB161E-MHD2B-TAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8UDFN |
|
MX25L25673GZ4I-08GMacronix |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
S29GL01GT12TFVV20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS61NVP51236B-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
RM25C256C-LTAI-TAdesto Technologies |
IC CBRAM 256KBIT SPI 8TSSOP |
|
RMWV6416AGSA-5S2#AA0Renesas Electronics America |
IC SRAM 64MBIT PARALLEL 48TSOP I |
|
CY62137FV30LL-45ZSXARochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
MT53D512M16D1DS-046 AIT:DMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
S29AL008J55BFIR20Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
GS832118AGD-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
SMJ61CD16-45JDMRochester Electronics |
STANDARD SRAM, 16KX1, 45NS |
|
70T659S10BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S25FL512SAGBHIS13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |