HEATSINK 25X25X20MM L-TAB T766
IC EEPROM 8KBIT SINGLE WIRE 8DIP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | Single Wire |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V3557S80PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
25AA02E48T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI SOT23-6 |
|
24AA025T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
TH58NVG2S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 63BGA |
|
EM6HE16EWXD-10IHEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
71V256SA15PZGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
6116SA120TDBRochester Electronics |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
IS61LPS25636A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61DDP2B42M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
IS25WP128-JMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CY7C1021B-15ZCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
W25M512JVEIQWinbond Electronics Corporation |
IC FLSH 512MBIT SPI 104MHZ 8WSON |
|
CY14E101Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 128KX8, CMOS, |