DC/DC CONVERTER +/-5V 20W
IC SRAM 256KBIT PARALLEL 28TSOP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
6116SA120TDBRochester Electronics |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
IS61LPS25636A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61DDP2B42M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
IS25WP128-JMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CY7C1021B-15ZCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
W25M512JVEIQWinbond Electronics Corporation |
IC FLSH 512MBIT SPI 104MHZ 8WSON |
|
CY14E101Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 128KX8, CMOS, |
|
IS42S32200L-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
71024S15YGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
R1Q2A7218ABB-40IA0Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
AT28C010-15EM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32LCC |
|
CY7C1412KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS45S16160G-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |