类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
11LC020T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8MSOP |
|
S25FL128SAGMFVR00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
5962-8961415QXARochester Electronics |
UVPROM, 128KX8, 45NS, CMOS |
|
CD22101F3ARochester Electronics |
4 X4 XPOINT SWITCH WITH MEMORY |
|
24LC08B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
71V67903S80PFGIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C009V-20AXIFlip Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
S29GL512T12DHN013Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
UPD46365362BF1-E40-EQ1-ARochester Electronics |
QDR SRAM, 1MX36, 0.45NS |
|
FM93C46TLMT8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
CY7C09099V-7AXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
24LC08BHT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
CY7C1168KV18-450BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |