类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL128SDPBHI213Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
BR95080-RMN6TPROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8SO |
|
MX25L3235EM2I-10GMacronix |
IC FLASH 32MBIT SPI 104MHZ 8SOP |
|
AS7C34098A-12TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
CY7C1360B-200AJCRochester Electronics |
CACHE SRAM, 256KX36, 3NS |
|
24AA64T-E/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
SST39VF1601C-70-4I-EKE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
SST39VF801C-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
S25FL256SAGBHID10Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
IS46R16320D-5BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
R1QDA3618CBG-19IB0Rochester Electronics |
STANDARD SRAM, 2MX18, 0.45NS |
|
S25FL064LABMFN013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
CY7C1009D-10VXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |