类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46R16320D-5BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
R1QDA3618CBG-19IB0Rochester Electronics |
STANDARD SRAM, 2MX18, 0.45NS |
|
S25FL064LABMFN013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
CY7C1009D-10VXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S29GL512S11TFI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
WCMA2008U1X-FF70TRochester Electronics |
SRAM CHIP ASYNC SINGLE 3V 2M BIT |
|
SST39SF020A-55-4C-WHE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
NM93C66LZNRochester Electronics |
EEPROM, 256X16, SERIAL PDIP8 |
|
MX29GL512FLT2I-11GMacronix |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
BR93G76F-3GTE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 3MHZ 8SOP |
|
70T651S10BFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208FPBGA |
|
CY7C1338B-100BGCRochester Electronics |
CACHE SRAM, 128KX32, 8NS |
|
CY7C1370D-167AXCTRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |