类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128b (16 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 4ms |
访问时间: | 3500 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V28L20PFGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
6116SA20SOG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
W966D6HBGX7I TRWinbond Electronics Corporation |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
R1LP0408CSB-7LC#S0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
IS64WV25616EDBLL-10BLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
MX25L2006EZUK-12GMacronix |
IC FLASH 2MBIT SPI 86MHZ 8USON |
|
CAV24C64WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 8SOIC |
|
IS42S83200G-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1361S-133AXIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
93C56BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ SOT23-6 |
|
UPD46365092BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 4MX9, 0.45NS |
|
34AA02T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
AS4C16M32MD1-5BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 90FBGA |