类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
34AA02T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
AS4C16M32MD1-5BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 90FBGA |
|
AT25DF041B-UUN-TAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8WLCSP |
|
S26KL512SDABHB023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CY7C2563XV18-600BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS61C5128AL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL128N10TFI010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
TMS6789-20NRochester Electronics |
STANDARD SRAM, 16KX4 |
|
S29GL128S90FHSS10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS43TR16256AL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS61LV12816L-10TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1565KV18-400BZXCRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
11LC160T-E/TTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE SOT23 |