类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 150 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q128JVEIMWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
M34E02-FMC6TGSTMicroelectronics |
IC EEPROM 2KBIT I2C 8UFDFPN |
|
7132LA100PDGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
GD25LQ16CSIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
AT25320B-MEHL-TRochester Electronics |
AT25320 - EEPROM, 4KX8, SERIAL |
|
IS64WV6416BLL-15TLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
S25FL512SAGMFA013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
W972GG6KB-25Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 84WBGA |
|
W947D2HBJX5I TRWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IS61QDPB42M36A-400M3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
24LC32AF-E/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
STK14C88-3WF45Rochester Electronics |
IC NVSRAM 256KBIT PARALLEL 32DIP |
|
AT25XE512C-SSHN-BAdesto Technologies |
IC FLASH 512KBIT SPI 8SOIC |