类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Kb (64K x 8) |
内存接口: | SPI - Dual I/O |
时钟频率: | 50 MHz |
写周期时间 - 字,页: | 55µs, 6ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-XFDFN Exposed Pad |
供应商设备包: | 8-USON (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39VF3202B-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
CY7C1041BNV33L-15ZXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MX29SL802CTXHI-90GMacronix |
IC FLASH 8MBIT PARALLEL 48WFBGA |
|
M29W320ET70N6EFlip Electronics |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT25160B-SSHL-BRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
CY62148G-45ZSXIRochester Electronics |
STANDARD SRAM, 512KX8, 45NS, CMO |
|
MR2A08AMYS35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 44TSOP2 |
|
S29GL256P11FFIV10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IS45S32800J-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
CY7C0850V-133ACRochester Electronics |
DUAL-PORT SRAM, 32KX36, 4.4NS |
|
MT41K64M16TW-107 AAT:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
CAT24S128C4ATRSanyo Semiconductor/ON Semiconductor |
IC EEPROM 128K I2C 1MHZ 4WLCSP |
|
MR25H256MDCREverspin Technologies, Inc. |
IC RAM 256KBIT SPI 40MHZ 8DFN |