类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62148DV30L-55SXIRochester Electronics |
STANDARD SRAM, 512KX8 |
|
HM4-65162B/883Rochester Electronics |
2K X 8 ASYNCHRONOUS CMOS SRAM |
|
71V3556SA100BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V124SA12YGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT48LC4M32B2P-6A:LMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS61WV102416FBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
DS1230ABP-100Rochester Electronics |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
AT25FF081A-SHN-TAdesto Technologies |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
71256SA20PZGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
S29GL064N90FFIS32Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
70V7339S166BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
71V3578S150PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CAT24WC256XA-TE13Rochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |