类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 8Mb (1M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST25VF040B-50-4I-S2AFRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
25C160-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
CAT24C64XIRochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
IS43DR81280B-25DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
S25FL128SAGMFIG13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
LE25U40CQH-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
CY62148EV30LL-55SXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32SOIC |
|
AS7C3256A-12TCNAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
S29GL256S90DHSS43Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S25FL256LDPMFB000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
FT24C256A-ESG-TFremont Micro Devices |
IC EEPROM 256KBIT I2C 1MHZ 8SOP |
|
70T3599S133BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S25FL256SAGMFBG01Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |