English
简体中文
FUSE BRD MNT 8A 32VAC/VDC
IC SRAM 8MBIT PARALLEL 90TFBGA
CRYSTAL 13.5600MHZ 18PF SMD
SMALL-SIGNAL SCHOTTKY BARRIER DI
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25C320-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
6116LA15SOGRochester Electronics |
SRAM 16K (2K X 8-BIT) |
|
IS25LP128-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
TE28F256P33T95ARochester Electronics |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
S25FL128SAGNFI010Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT57W1MH18BF-7.5Rochester Electronics |
DDR SRAM, 1MX18, 0.5NS PBGA165 |
|
W25Q128JVFIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IS25WP256D-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
S-24CM01CI-J8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 1MBIT I2C 1MHZ 8SOP |
|
IS42S32200L-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
BR93G56FVT-3GE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8TSSOPB |
|
S29GL032N90TFI013Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 56TSOP |
|
GS8182T18BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |