







FIXED IND 15NH 400MA 460 MOHM
TVS DIODE 5V 9.2V SMA
IPI60R190C6XKSA1 - COOLMOS N-CHA
IC SRAM 72MBIT PARALLEL 165FBGA
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 72Mb (4M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT29F4G08ABADAH4-AITX:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
GS81302TT37GE-450IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
|
NM25C040NRochester Electronics |
EEPROM, 512X8, SERIAL PDIP8 |
|
|
71V016SA15PHIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
|
71V2556SA100BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
|
IS42S81600F-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
|
AS5F12G04SND-10LINAlliance Memory, Inc. |
IC FLASH 2GBIT SPI/QUAD I/O 8LGA |
|
|
BR25H128F-2CE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 10MHZ 8SOP |
|
|
FT24C64A-ENR-TFremont Micro Devices |
IC EEPROM 64KBIT I2C 1MHZ 8DFN |
|
|
70T633S10BFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
|
GS8662R18BGD-350IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
|
71T75802S100BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
|
R1LV5256ESP-5SI#B1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |