English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-VFBGA |
| 供应商设备包: | 96-FBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M95640-RMN6PSTMicroelectronics |
IC EEPROM 64KBIT SPI 20MHZ 8SO |
|
NM27C010N120Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32DIP |
|
93C46BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
IS64LPS12832EC-200TQLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 100LQFP |
|
IS42S83200J-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
70V659S12BCI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
IS42VM16200D-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 54TFBGA |
|
CY7C1049CV33-12ZXCRochester Electronics |
STANDARD SRAM |
|
71124S12YG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1383KV33-133AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C2665KV18-450BZIRochester Electronics |
QDR SRAM, 4MX36, 0.45NS PBGA165 |
|
24LC16BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8MSOP |
|
IS41LV16105D-50TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
