English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71124S12YG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1383KV33-133AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C2665KV18-450BZIRochester Electronics |
QDR SRAM, 4MX36, 0.45NS PBGA165 |
|
24LC16BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8MSOP |
|
IS41LV16105D-50TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
S25FL128SDSMFN000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
S26KS512SDGBHI030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CY62136FV30LL-45ZSXARochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
7052L20PFGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 120TQFP |
|
BR25320N-10SU-2.7ROHM Semiconductor |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
CY62147CV33LL-70BVIRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
24LC21A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
S25FL512SDSBHI213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
