类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (128M x 8) |
内存接口: | SPI - Quad I/O, DTR |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 60µs, 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FS512SDSNFV011Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
CHS34C02HU4I-GT4Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8UDFN |
|
SST26WF016B-104I/SNRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
MK21DN512AVLK5,557Rochester Electronics |
KINETIS K21: 50MHZ CORTEX M4 MCU |
|
AS7C31025C-12JINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
BR93G86FVM-3AGTTRROHM Semiconductor |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
M34E04-FMC9TGSTMicroelectronics |
IC EEPROM 4KBIT I2C 1MHZ 8UFDFPN |
|
S29GL512S10FHSS10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
MT29F2G16ABAEAWP-AAT:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
S25FL256SAGBHI200Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
25LC010AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8TDFN |
|
93C46BT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TDFN |
|
71V3577YS85PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |