类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 2Mb (256K x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | 30µs, 3ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24CS01-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8TSSOP |
|
71V65703S75BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AS7C34098A-12JCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
71V416S15PHRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS46DR16640B-25DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
MT46V128M4FN-6:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AS7C34096A-15TINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
IS43R16320D-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
STK12C68-C45IRochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28CDIP |
|
CY7C1320KV18-250BZCRochester Electronics |
DDR SRAM, 512KX36, 0.45NS, CMOS, |
|
CY7C12681KV18-400BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
NV24C512MUW3VTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8UDFN |
|
CY7C1041CV33-12ZSXERochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |