English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 6ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W631GU8MB-12 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
24AA04T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
R1EX24064ASAS0A#U0Rochester Electronics |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
CY7C1545V18-333BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43R16320D-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
AS7C316098A-10TINTRAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
UPD44645362AF5-E50X-FQ1Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
W632GU6NB-12 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IS62WV5128BLL-55T2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
70V657S15BF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
IS42S32200L-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
AM93L422A/BUARochester Electronics |
STANDARD SRAM, 256X4, 55NS |
|
11AA02E48T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
