English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II+ |
| 内存大小: | 72Mb (2M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62137EV30LL-45ZSXICypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY14B104NA-ZS25X1Rochester Electronics |
NON-VOLATILE SRAM, 256KX16, 25NS |
|
W632GU6NB-09Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
W25Q40EWSNIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
CY7C1049BNL-17VCRochester Electronics |
STANDARD SRAM, 512KX8, 17NS PDSO |
|
MT55L256L18F1T-12TRRochester Electronics |
SRAM 3.3V 4M-BIT 256KX18 9NS |
|
MT57V1MH18EF-6Rochester Electronics |
DDR SRAM, 1MX18, 3NS, CMOS, PBGA |
|
AF016GEC5A-2001EXATP Electronics, Inc. |
IC 16GBIT 153BGA |
|
S25FL064LABMFV000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
71V3556SA166BGGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
25LC160BT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
041841WKAB-3Rochester Electronics |
256KX18 SRAM |
|
CY7C1312CV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
