类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1386B-167BGCRochester Electronics |
CACHE SRAM, 512KX36, 3.4NS |
|
24LCS52/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS29GL128-70SLETISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT PAR 56TSOP I |
|
AT28BV64B-20SU-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
CY7C1320KV18-250BZXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
MT55L256L32PF-10Rochester Electronics |
ZBT SRAM, 256KX32, 5NS, CMOS, PB |
|
EDB2432B4MA-1DAAT-F-DMicron Technology |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
S26KS256SDPBHI020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
70V657S12BF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
71V016SA12YIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
71V65603S133BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1041BV33-15VCTRochester Electronics |
STANDARD SRAM, 256KX16, 15NS |
|
71V2546S100PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |