English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S34MS02G100BHI003Flip Electronics |
IC FLASH 2GBIT PARALLEL 63BGA |
|
AT25DN512C-MAHF-TAdesto Technologies |
IC FLASH 512KBIT SPI 8UDFN |
|
IS61LPS409618B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
11LC040-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SGL WIRE 8MSOP |
|
TC58BVG1S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT 63TFBGA |
|
MT25QL01GBBB8ESF-0AATMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |
|
S29GL512S10GHI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56FBGA |
|
6116LA35DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
M95160-RMC6TGSTMicroelectronics |
IC EEPROM 16KBIT SPI 8UFDFPN |
|
EDB5432BEBH-1DAUT-F-DMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
S25FL129P0XMFV003Rochester Electronics |
FLASH, 16MX8, PDSO16 |
|
CY7C1356C-250AXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1021V33-15VCRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
