类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 8 x 2) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 350 ns |
电压 - 电源: | 1.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61QDPB42M36A1-500M3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
DS1350YP-100Rochester Electronics |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
S29GL128S90DHSS23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
W25Q80EWBYIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8WLCSP |
|
GD25LQ32DSIGGigaDevice |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
CAT24C01WGI-26703Rochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
THGBMNG5D1LBAITToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 32GBIT EMMC 153WFBGA |
|
93LC66A/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
AS7C3513B-15TCNTRAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44TSOP2 |
|
SST38VF6404B-70I/CDRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
25LC010AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
TC58NVG2S0HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 63TFBGA |
|
GS81313LQ18GK-800IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |