类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14B104NA-ZS45XECypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
CY7C1011CV33-12BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
S25FL127SABNFI103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AS7C4098A-20JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CAT24C01YI-GRochester Electronics |
IC EEPROM 1KBIT I2C 8TSSOP |
|
CY7C1021V33L-15BACTRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
CY62157DV20L-70BVXIRochester Electronics |
SRAM CHIP ASYNC SINGLE 1.8V 8M B |
|
24FC1025T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY14B512I-SFXIRochester Electronics |
IC NVSRAM 512KBIT I2C 16SOIC |
|
24AA128T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |
|
CY7C1415BV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
GD25Q32CWIGRGigaDevice |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
IS62WV25616BLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |