类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C16M16SA-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
25LC080CT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
BR25H040F-2CE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 10MHZ 8SOP |
|
CY27C010-90WCRochester Electronics |
UVPROM, 128KX8, 90NS CDIP32 |
|
IS61WV51216EEBLL-10T2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
CY15B064J-SXACypress Semiconductor |
IC FRAM 64KBIT I2C 1MHZ 8SOIC |
|
IS61LPD25636A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS42SM32400H-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1313BV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1020DV33-10VXIRochester Electronics |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
71V3558XS133PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
70T653MS12BCGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
24AA00-I/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8TSSOP |