类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 1Mb (64K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1615KV18-300BZXICypress Semiconductor |
NO WARRANTY |
|
71V432S10PFRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
11LC080-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8SOIC |
|
71V416L12BEGRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY7C1614KV18-250BZCRochester Electronics |
QDR SRAM, 4MX36, CMOS, PBGA165 |
|
CY7C196-25VCRochester Electronics |
STANDARD SRAM, 64KX4, 25NS |
|
25AA1024-I/MFRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8DFN |
|
IS43LR16320C-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
BRCB008GWZ-3E2ROHM Semiconductor |
IC EEPROM 8K I2C UCSP30L1 |
|
S-24C08DI-A8T1U5ABLIC U.S.A. Inc. |
IC EEPROM 8KBIT I2C HSNT-8-A |
|
IS64WV6416BLL-15BLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
FT24C08A-ULR-TFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ SOT23-5 |
|
IS62WV51216GBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TSOP I |