English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 8.5 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY14ME064J1A-SXIRochester Electronics |
IC NVSRAM 64KBIT I2C 8SOIC |
|
IS61DDP2B22M18A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
93LC46C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8MSOP |
|
IS43LQ32256A-062BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 200TFBGA |
|
AS7C38096A-10BINAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
IS25WP080D-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8WSON |
|
25AA080C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
MTFC16GAKAEDQ-AIT TRMicron Technology |
IC FLASH 128GBIT MMC 100LBGA |
|
IS61VPS102418B-250TQLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
24LC01B-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
24CW160T-I/MUYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8UDFN |
|
CY7C1356SV25-166AXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT29F2G08ABAGAWP-IT:GMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
