English
简体中文
COOLX POWER SUPPLY
HEATSINK 40X40X9.5MM XCUT T412
IC BATT PROT LI-ION 1CELL SNT-6A
QDR SRAM, 2MX18, 0.45NS, CMOS, P
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 36Mb (2M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS28E07+TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE TO92-3 |
|
24LC04-I/SLRochester Electronics |
4K-BIT (2X256X8) SERIAL EEPROM, |
|
25LC040AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI SOT23-6 |
|
NV25020DWHFT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
24LC08BT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8TDFN |
|
RMLV0416EGSB-4S2#AA0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
IS21ES64G-JQLIISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512GBIT EMMC 100LFBGA |
|
24LC128-E/MSRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8MSOP |
|
IS66WVC4M16EALL-7010BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
CY62256NLL-70PXCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28DIP |
|
AS7C3256A-20TCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
FT24C128A-ESR-TFremont Micro Devices |
IC EEPROM 128KBIT I2C 1MHZ 8SOP |
|
CY7C1312BV18-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |