English
简体中文
CAP TACTILE ROUND BLACK 6C
IC SRAM 18MBIT PARALLEL 165FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V2546S150PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
71P74604S200BQGRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
71V67703S80PFRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
70V658S10BFGRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208FPBGA |
|
7142LA20JG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
CY62126DV30LL-55BVIRochester Electronics |
STANDARD SRAM, 64KX16, 55NS |
|
IS43R83200D-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
IS61VPS102436B-250B3L-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165TFBGA |
|
M24C08-FMH6TGSTMicroelectronics |
IC EEPROM 8KBIT I2C 5UFDFPN |
|
CY7C1062AV25-10BGCRochester Electronics |
STANDARD SRAM, 512KX32, 10NS |
|
BR24S32FV-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SSOPB |
|
RM25C256DS-LSNI-TAdesto Technologies |
IC CBRAM 256KBIT SPI 20MHZ 8SOIC |
|
CAT25320HU3IGT3CRochester Electronics |
IC EEPROM 32KBIT SPI 10MHZ 8UDFN |