类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 36Mb (2M x 18) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25U8035FM2IMacronix |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
PC28F256M29EWLAFlip Electronics |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S25FS128SAGNFI103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY7C1062G30-10BGXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
CY7C1061GE-10ZSXITCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
70V658S15BF8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
CY62146CV30LL-55BAIRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |
|
IS61VPS102418B-250TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
CY27C256-70JCRochester Electronics |
OTP ROM, 32KX8, 70NS PQCC32 |
|
CAT24C32WE-GRochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
70T659S10BCI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
24AA04-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
S25FS256SAGBHM200Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |