类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.6V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-TSSOP-BJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25Q16CWIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
MT55V512V32PF-10Rochester Electronics |
ZBT SRAM, 512KX32, 5NS PBGA165 |
|
IS43LD16128B-18BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
71V3578S150PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
SST39VF401C-70-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
AT28LV010-20JURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
70V3389S4BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
24LC08BHT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8TDFN |
|
CAT24C08VP2I-GT3Rochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8TDFN |
|
70T3519S133BFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
70V24S55PFGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
7164S25TPGRochester Electronics |
IC SRAM 64KBIT PARALLEL 28DIP |
|
GS81314LQ19GK-933IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |