类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 6ns |
访问时间: | 3.5 ns |
电压 - 电源: | 2.3V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93AA66CT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |
|
MT28EW256ABA1HPC-0SITMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
63S281ANLRochester Electronics |
63S281 - OTP ROM, 256X8, 28NS |
|
71016S15YGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS61LF102436B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
71V67602S133BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
S25FL032P0XMFI013Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
EDB1316BDBH-1DAAT-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
SST39SF020A-55-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AS7C4098A-12JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
71V124SA10PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
CY7C188-15VCTRochester Electronics |
STANDARD SRAM, 32KX9 |
|
IS25WP016D-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |