类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 128Gb (16G x 8) |
内存接口: | Parallel |
时钟频率: | 83 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F512G08EBHAFJ4-3T:AMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
SST25WF080B-40I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 40MHZ 8SOIC |
|
AS7C4098A-12TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
N25Q064A13EF8H0EAlliance Memory, Inc. |
IC FLSH 64MBIT SPI 108MHZ 8VDFPN |
|
CY7C25652KV18-400BZIRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
SST25VF512A-33-4C-SAERoving Networks / Microchip Technology |
IC FLASH 512KBIT SPI 33MHZ 8SOIC |
|
85C82-E/PRochester Electronics |
256 X 8 I2C/2-WIRE SERIAL EEPROM |
|
CY7C1009B-15VXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
FM24C256FLZVM8Rochester Electronics |
IC EEPROM 256KBIT I2C 400KHZ 8SO |
|
CY7C1415BV18-200BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS62WV6416ALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
MR0A08BYS35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 44TSOP2 |
|
71V3556SA166BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |