类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24FC02-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |
|
GS8256436GB-250IGSI Technology |
IC SRAM 288MBIT PAR 119FPBGA |
|
EDB5432BEBH-1DIT-F-R TRMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
IS45S32200L-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
S34MS04G200BHV000Rochester Electronics |
4 GB, 1-BIT ECC, 1.8V SLC NAND F |
|
W9816G6JB-6IWinbond Electronics Corporation |
IC DRAM 16MBIT PARALLEL 60VFBGA |
|
IS62WV2568EBLL-45HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
AS7C1024B-20TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
MT29F32G08ABCDBJ4-6IT:D TRMicron Technology |
IC FLASH 32GBIT PARALLEL 132VBGA |
|
24FC04T-E/MUYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
CY7C197-20VCRochester Electronics |
STANDARD SRAM, 256KX1, 20NS |
|
S25FL064LABNFB040Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8USON |
|
CY62256NLL-55SNIRochester Electronics |
STANDARD SRAM, 32KX8, 55NS |