English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | F-RAM™ |
| 包裹: | TubeTube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FRAM |
| 技术: | FRAM (Ferroelectric RAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 40 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C2568KV18-400BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
7132LA55CRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
S29GL128S90FAI010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
S25FL256SAGBHIC03Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
S29GL128S90FHSS20Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS43R16160F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
SST25VF080B-50-4C-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 50MHZ 8SOIC |
|
S29GL256P90TFCR20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS25WP064A-RHLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
IS42VM32200M-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
CY7C1263KV18-550BZXCRochester Electronics |
QDR SRAM, 2MX18, 0.45NS PBGA165 |
|
SST39WF800B-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
93AA46/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
