English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, GL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 110 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C04C-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
70V7519S133BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
24LC024-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
93C56AT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TDFN |
|
CY7C1370D-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
IS45S16320F-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C1426KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
M95256-RDW6TPSTMicroelectronics |
IC EEPROM 256KBIT SPI 8TSSOP |
|
AS4C256M8D3LC-12BINTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
93AA56BX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
71T75902S75PFG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS62C51216AL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
SM671PEA ADS TS823Silicon Motion |
FERRI-UFS 16GB 3D TLC + EXT. TEM |
