类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (32K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT54V1MH18EF-7.5Rochester Electronics |
QDR SRAM, 1MX18, 3NS PBGA165 |
|
CY7C1021BN-15ZCTRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
AS7C34096A-12TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
S-93C46BD0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8SOP |
|
71V67703S75BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY14V101LA-BA25XIESRochester Electronics |
NON-VOLATILE SRAM |
|
BR93G66FVJ-3BGTE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
71V124SA12TYGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S25FL512SDPBHV213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
S29JL032J70BHI320Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
CY7C026AV-25AXCFlip Electronics |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS49NLS96400A-33WBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144TWBGA |
|
IS61WV5128EDBLL-10KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36SOJ |