类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 8ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V67703S75BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY14V101LA-BA25XIESRochester Electronics |
NON-VOLATILE SRAM |
|
BR93G66FVJ-3BGTE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
71V124SA12TYGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S25FL512SDPBHV213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
S29JL032J70BHI320Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
CY7C026AV-25AXCFlip Electronics |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS49NLS96400A-33WBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144TWBGA |
|
IS61WV5128EDBLL-10KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
25AA080B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
MX29GL128FLT2I-70GMacronix |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
93LC86AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
S29GL01GS11FHSS20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |