English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-LSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-SSOP-B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1514KV18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
24AA16H-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
GD25VQ20CTIGGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
71V3558SA100BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AS7C31024B-10TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
S29GL128N11TFA023Rochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
6116SA20DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
MT48LC64M8A2P-75:CAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
FT24C08A-ETR-TFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
71V3576S133PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1011G30-10ZSXATCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
SST39VF1601C-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY7C1312KV18-250BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
