类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25VQ20CTIGGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
71V3558SA100BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AS7C31024B-10TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
S29GL128N11TFA023Rochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
6116SA20DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
MT48LC64M8A2P-75:CAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
FT24C08A-ETR-TFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
71V3576S133PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1011G30-10ZSXATCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
SST39VF1601C-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY7C1312KV18-250BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
54F189LLQBRochester Electronics |
STANDARD SRAM, 16X4, 32NS, CMOS |
|
71V256S12YGRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |