English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 128Kb (16K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 550 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT58L128L18PT-7.5Rochester Electronics |
CACHE SRAM, 128KX18, 4NS PQFP100 |
|
W25Q20EWUXIE TRWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8USON |
|
S29GL01GT12TFN013Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS43LD16128B-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
AS7C3513B-15JCNAlliance Memory, Inc. |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
DS1220AB-100IND+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
IS61LPS102418B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
CY7C1381D-100BZXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
W25Q64JWSSIQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
IS62WV102416DBLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
93LC86CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
IS66WVC2M16ECLL-7010BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
|
CY7C1263XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
