类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8, 1K x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS66WVC2M16ECLL-7010BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
|
CY7C1263XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CAT25C128PRochester Electronics |
IC EEPROM 128KBIT SPI 5MHZ 8DIP |
|
6116LA20SOGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
IS43TR16256AL-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
AT25FF321A-SHN-BAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
MR1A16AMA35Everspin Technologies, Inc. |
IC RAM 2MBIT PARALLEL 48FBGA |
|
CY7C1911KV18-300BZCRochester Electronics |
QDR SRAM, 2MX9, 0.45NS, CMOS, PB |
|
S29GL128P90FAIR10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT25DF041B-XMHN-BAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8TSSOP |
|
IS43TR16640CL-125JBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
S29GL064N11FFIS33Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W632GG6NB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |