类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 8Mb (512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 8ns |
访问时间: | 8 ns |
电压 - 电源: | 2.4V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-miniBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C245-45PCRochester Electronics |
OTP ROM, 2KX8, 70NS |
|
IS25LP080D-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8WSON |
|
AS7C32098A-10TCNTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
IS42S83200J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
IS25WP016D-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S25FS512SDSMFV011Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
AT28HC256-70SU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
71V3558SA133BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
BR24C02-DS6TPROHM Semiconductor |
IC EEPROM 2KBIT I2C 8TSSOP |
|
BR25L080FJ-WE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SOPJ |
|
RMLV0816BGSA-4S2#KA0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
W9751G6NB-25Winbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84VFBGA |
|
71T75802S200PFG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |