English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43R16160D-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY7C008V-25ACRochester Electronics |
DUAL-PORT SRAM, 64KX8, 25NS |
|
CYDM128B16-55BVXIRochester Electronics |
IC SRAM 128KBIT PAR 100VFBGA |
|
MT58L64L36FT-7.5Rochester Electronics |
CACHE SRAM 64KX36 7.5NS PQFP100 |
|
FM25V02-GFlip Electronics |
IC FRAM 256KBIT SPI 40MHZ 8SOIC |
|
M24128-DFMC6TGSTMicroelectronics |
IC EEPROM 128KBIT I2C 8UFDFPN |
|
M93C56-WMN6TPSTMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8SO |
|
AS8C403600-QC150NAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
MR256A08BMA35REverspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 48FBGA |
|
GS8342D18BGD-400IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
HN27C256HG85Rochester Electronics |
UV EPROM, 32KX8, 85NS |
|
CY62157DV30LL-70BVIRochester Electronics |
STANDARD SRAM, 512KX16, 70NS |
|
GS8161Z36DGD-333IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
