类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 667 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-VFBGA |
供应商设备包: | 96-VFBGA (7.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62177DV30LL-55BAXIRochester Electronics |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
MT53D512M32D2DS-046 IT:D TRMicron Technology |
IC DRAM 16GBIT 2.133GHZ 200WFBGA |
|
M95512-WMN6TPSTMicroelectronics |
IC EEPROM 512KBIT SPI 16MHZ 8SO |
|
24VL014H/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
23A1024-E/SNRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD I/O 8SOIC |
|
M95128-DRDW3TP/KSTMicroelectronics |
IC EEPROM 128KBIT SPI 8TSSOP |
|
W9725G8KB-25 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60WBGA |
|
24FC16-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8MSOP |
|
CAT25040VI-GT3JNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
AS6C62256A-70SCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOP |
|
IS25WP016D-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IS42RM32800K-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
93C66A-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |