类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 2.25Mb (128K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-LFBGA |
供应商设备包: | 208-CABGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V256SA20YIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
PC28F128P33BF60AAlliance Memory, Inc. |
IC FLASH 128MBIT PAR 64EASYBGA |
|
FT24C16A-USR-TFremont Micro Devices |
IC EEPROM 16KBIT I2C 1MHZ 8SOP |
|
AT28C256F-15UM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
70V9199L7PFGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
70V9269L9PRFG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
IS66WVC4M16ECLL-7010BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
CYD18S18V18-167BBAXCRochester Electronics |
DUAL-PORT SRAM, 1MX18, 4NS PBGA2 |
|
IS42RM16200D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 54TFBGA |
|
S29GL01GP12FFI020Flip Electronics |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT58L256L18F1T-10ITTRRochester Electronics |
SRAM SYNC DUAL 4M-BIT 256KX18 |
|
CY14B101J1-SXIRochester Electronics |
NON-VOLATILE SRAM, 128KX8, CMOS, |
|
IS46DR16160B-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |