English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 2.4V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 36-TFBGA |
| 供应商设备包: | 36-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24G64FV-3GTE2ROHM Semiconductor |
IC EEPROM 64K I2C 400KHZ 8SSOPB |
|
W25X40CLSNIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
CY7C024-15AXCRochester Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
71V67603S133BGGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AT28HC64B-70JURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
MT28EW128ABA1HPC-0SIT TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64LBGA |
|
CY14ME064Q1A-SXIRochester Electronics |
IC NVSRAM 64KBIT 40MHZ 8SOIC |
|
71V2556SA100BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
DS1265W-150+Rochester Electronics |
DS1265 8M NONVOLATILE SRAM |
|
MT58L256L18P1T-10Rochester Electronics |
CACHE SRAM, 256KX18, 5NS PQFP100 |
|
BR24S08FVJ-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP |
|
AT28C256F-15LM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 32LCC |
|
MX25R8035FBHIH2Macronix |
IC FLASH 8MBIT SPI/QUAD 8WLCSP |
