类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II+ |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 633 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
S27KL0641DABHB020Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
![]() |
SST26VF064B-104V/MFRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8WDFN |
![]() |
CY7C09269V-12ACRochester Electronics |
IC SRAM 256KBIT PARALLEL 100TQFP |
![]() |
BR24C21F-E2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOP |
![]() |
71V67603S150PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
![]() |
CY14V256LA-BA35XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48FBGA |
![]() |
70V3319S166BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
![]() |
MT46H32M16LFBF-6 AT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
![]() |
IS64WV25616BLL-10BLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
![]() |
IS46DR16640B-25DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
![]() |
MT58V1MV18DT-6Rochester Electronics |
CACHE SRAM, 1MX18, 3.5NS PQFP100 |
![]() |
CY7C1314KV18-300BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
![]() |
CY7C1340F-100ACRochester Electronics |
CACHE SRAM, 128KX32, 4.5NS |