类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 8Mb (1M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C199CN-12VXIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS42VM32100D-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
MT25QL01GBBB8ESF-0SITMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |
|
AT27LV040A-90JU-TRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
GT28F320C3BA110 |
IC FLASH 32MBIT PAR 48UBGA CSP |
|
71024S12TYGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS42VM16800H-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
71V67903S80PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
NDB16PFC-5EETInsignis Technology Corporation |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AS4C2M32SA-6TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
MX25L12845GMI-10GMacronix |
IC FLSH 128MBIT SPI 120MHZ 16SOP |
|
S70FS01GSAGBHI213Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
MT53E768M32D4DT-046 AAT:EMicron Technology |
IC DRAM 24GBIT 2.133GHZ 200VFBGA |